📄️ Crystalline-Crystalline Phase Change
Phase change memories (PCM) based on reversible phase changes between two crystalline states with differing electrical resistivities are expected to have superior writing power and speed as compared to conventional PCM devices which utilize a higher configurational entropy change between a low-resistance crystalline phase and high-resistance amorphous phase. Recent studies have demonstrated crystalline-crystalline (β → γ) phase transformations of In2Se3 can be used in a PCM device so understanding the behavior in In2Se3 phase transformations is critical to developing low energy In2Se3 memory systems.
📄️ TEM Studies of Memristors
TEM is a powerful tool to image atoms and nanoscale phenomena at high spatial reosultion where are key parameters in devices with switching layers only a few atoms thick. Throughout my PhD work, I collaborate with other researchers more focused on synthesis of 2D materials or novel 2D/1D device architectures to directly image the key interfaces of the 2D materials. I am also combinig this approach with my investigation of layer-by-layer phase change mememories.
📄️ Defect Engineering for Reliability
2D memristors have demonstrated attractive resistive switching characteristics recently but also suffer from the reliability issue, which limits practical applications. Previous efforts on 2D memristors have primarily focused on exploring new material systems, while damage from the metallization step remains a practical concern for the reliability of 2D memristors.